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| FDM606P July 2002 FDM606P P-Channel 1.8V Logic Level Power Trench(R) MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features * Fast switching * rDS(ON) = 0.026 (Typ), VGS = -4.5V * rDS(ON) = 0.033 (Typ), VGS = -2.5V * rDS(ON) = 0.052 (Typ), VGS = -1.8V Applications * Load switch * Battery charge * Battery disconnect circuits D Bottomview 3 X 2 (8 Lead) SinglePad ShortPin D G D D 1 2 8 7 6 5 1 D D D 3 4 S S MicroFET 3x2-8 MOSFET Maximum Ratings TA=25C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = - 4.5V) ID Continuous (TC = 100 C, VGS = - 2.5V) Continuous (TC = 100oC, VGS = -1.8V) Pulsed PD TJ, TSTG Power dissipation Derate above 25C Operating and Storage Temperature o Ratings -20 8 -6.8 -3.8 -3.0 Figure 4 1.92 15.4 -55 to 150 Units V V A A A W mW/oC o C Thermal Characteristics RJC RJA Thermal Resistance Junction to Case (Note1) Thermal Resistance Junction to Ambient (Note 2) 6.0 65 oC/W o C/W Package Marking and Ordering Information Device Marking .06P Device FDM606P Package MicroFET3x2 Reel Size 178 mm Tape Width 8 mm Quantity 3000 (c)2002 Fairchild Semiconductor Corporation FDM606P Rev. C FDM606P Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V VDS = -16V VGS = 0V VGS = 8V TA=100oC -20 -1 -5 100 V A nA On Characteristics V GS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = -250A ID = -6.8A, VGS = -4.5V ID = -3.8A, VGS = -2.5V ID = -3.0A, VGS = -1.8V -0.4 -0.9 0.026 0.033 0.052 -1.5 0.030 0.038 0.070 V Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(-2.5) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at -4.5V Total Gate Charge at -2.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = -10V, VGS = 0V, f = 1MHz VGS = 0V to -4.5V VGS = 0V to -2.5V VDD = -10V ID = -3.0A Ig = 1.0mA 2200 350 160 20 12 3.0 3.8 30 18 pF pF pF nC nC nC nC Switching Characteristics (VGS = -4.5V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = -10V, ID = -3.0A VGS = -4.5V, RGS = 6.8 9 46 134 71 81 308 ns ns ns ns ns ns Drain-Source Diode Characteristics V SD trr QRR Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the center drain pad. RJC is guaranteed by design while RCA is determined by user's board design. 2. RJA is 65 oC/W (steady state) when mounted on a 1 inch2 copper pad on FR-4. Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = -6.8A ISD = -3.0A, dISD/dt = 100A/s ISD = -3.0A, dISD/dt = 100A/s - -0.9 - -1.2 28 20 V ns nC (c)2001 Fairchild Semiconductor Corporation FDM606P Rev. C, FDM606P Typical Characteristic 1.2 TA = 25C unless otherwise noted 8 POWER DISSIPATION MULTIPLIER 1.0 -ID, DRAIN CURRENT (A) 6 VGS = -4.5V 0.8 0.6 4 VGS = -2.5V 2 0.4 0.2 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (o C) TA, CASE TEMPERATURE (o C) 0 Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature ZJA, NORMALIZED 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.01 10-5 10-4 10 -3 10-2 10-1 100 101 102 103 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 200 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TA 125 100 -IDM, PEAK CURRENT (A) 10 VGS = -4.5V VGS = -2.5V 5 10-5 10-4 10-3 10-2 10-1 t , PULSE WIDTH (s) 100 101 10 2 103 Figure 4. Peak Current Capability (c)2001 Fairchild Semiconductor Corporation FDM606P Rev. C, FDM606P Typical Characteristic (Continued) TA = 25C unless otherwise noted 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V 20 VGS = -4.5V -ID, DRAIN CURRENT (A) 16 VGS = -2V 12 VGS = -1.8V VGS = -2.5V -ID , DRAIN CURRENT (A) 16 12 TJ = 150oC 8 TJ = 25oC 4 TJ = -55oC 8 4 TA = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.5 2.0 0 1.0 1.5 2.0 2.5 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0 0.5 1.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 60 ID = -6.8A rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 50 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX Figure 6. Saturation Characteristics 1.50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.25 40 ID = -1A 30 1.00 VGS = -4.5V, ID = -6.8A 20 1 2 3 4 5 6 -VGS, GATE TO SOURCE VOLTAGE (V) 0.75 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (o C) Figure 7. Drain to Source On Resistance vs Gate Voltage and Drain Current 1.25 VGS = VDS, ID = 250A Figure 8. Normalized Drain to Source On Resistance vs Junction Temperature 1.10 ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.05 1.00 1.00 0.75 0.95 0.50 -80 -40 0 40 80 120 160 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) Figure 9. Normalized Gate Threshold Voltage vs Junction Temperature Figure 10. Normalized Drain to Source Breakdown Voltage vs Junction Temperature (c)2001 Fairchild Semiconductor Corporation FDM606P Rev. C, FDM606P Typical Characteristic (Continued) TA = 25C unless otherwise noted 4000 -VGS , GATE TO SOURCE VOLTAGE (V) CISS = CGS + CGD 6 VDD = -10V C, CAPACITANCE (pF) 1000 COSS CDS + C GD CRSS = CGD 4 2 WAVEFORMS IN DESCENDING ORDER: ID = -6.8A ID = -1A 0 0 6 12 Qg , GATE CHARGE (nC) 18 24 VGS = 0V, f = 1MHz 100 0.1 1 -VDS , DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 11. Capacitance vs Drain to Source Voltage Figure 12. Gate Charge Waveforms for Constant Gate Currents 400 VGS = -4.5V, VDD = -10V, ID = -3.0A 300 td(OFF) SWITCHING TIME (ns) 200 tf tr td(ON) 0 0 10 20 30 40 50 RGS, GATE TO SOURCE RESISTANCE () 100 Figure 13. Switching Time vs Gate Resistance (c)2001 Fairchild Semiconductor Corporation FDM606P Rev. C, TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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